P-Channel MOSFET, 7.2 A, 40 V, 8-Pin SO-8 Vishay SI4447ADY-T1-GE3

RS Stock No.:: 180-7289
Mfr. Part No.:: SI4447ADY-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 7.2 A, 40 V, 8-Pin SO-8 Vishay SI4447ADY-T1-GE3

2440 In stock - FREE next working day delivery available

Price Each (On a Reel of 2500)

£0.185

(exc. VAT)

£0.222

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.185	£462.50

*price indicative

RS Stock No.:: 180-7289
Mfr. Part No.:: SI4447ADY-T1-GE3
Brand:: Vishay

Technical Reference

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• Adaptor switch
• Load switches
• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.2 A
Maximum Drain Source Voltage	40 V
Package Type	SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.062 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Number of Elements per Chip	1