Vishay TrenchFET P-Channel MOSFET, 7.2 A, 40 V, 8-Pin SO-8 SI4447ADY-T1-GE3

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£8.96

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£10.76

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20 - 180£0.448£8.96
200 - 480£0.376£7.52
500 - 980£0.359£7.18
1000 - 1980£0.341£6.82
2000 +£0.318£6.36

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Packaging Options:
RS Stock No.:
180-7948
Mfr. Part No.:
SI4447ADY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

40 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.062 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Adaptor switch
• Load switches
• Notebook PCs

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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