Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3
- RS Stock No.:
- 180-7948
- Mfr. Part No.:
- SI4447ADY-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
£7.18
(exc. VAT)
£8.62
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 40 unit(s) shipping from 01 June 2026
- Plus 3,180 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.359 | £7.18 |
| 200 - 480 | £0.301 | £6.02 |
| 500 - 980 | £0.287 | £5.74 |
| 1000 - 1980 | £0.273 | £5.46 |
| 2000 + | £0.255 | £5.10 |
*price indicative
- RS Stock No.:
- 180-7948
- Mfr. Part No.:
- SI4447ADY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.7W | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.7W | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
• Notebook PCs
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
Related links
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin TSSOP