Vishay TrenchFET P-Channel MOSFET, 19.7 A, 30 V, 8-Pin SO-8 SI4425DDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£655.00

(exc. VAT)

£785.00

(inc. VAT)

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  • Final 2,500 unit(s), ready to ship
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2500 +£0.262£655.00

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RS Stock No.:
180-7287
Mfr. Part No.:
SI4425DDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

19.7 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Desktop PCs
• Load switches
• Notebook PCs

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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