P-Channel MOSFET, 195 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA99DP-T1-GE3
- RS Stock No.:
- 188-5097
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Brand:
- Vishay
17065 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.12
(exc. VAT)
£2.54
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £2.12 | £10.60 |
*price indicative
- RS Stock No.:
- 188-5097
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +16 V |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Typical Gate Charge @ Vgs | 172.5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5.99mm |
| Height | 1.07mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
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