onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C
- RS Stock No.:
- 181-1903
- Mfr. Part No.:
- FDP4D5N10C
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£6.88
(exc. VAT)
£8.26
(inc. VAT)
FREE delivery for orders over £50.00
- 4 unit(s) ready to ship
- Plus 170 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £3.44 | £6.88 |
20 - 198 | £2.965 | £5.93 |
200 + | £2.57 | £5.14 |
*price indicative
- RS Stock No.:
- 181-1903
- Mfr. Part No.:
- FDP4D5N10C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 128 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Width | 4.67mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
Length | 10.36mm | |
Forward Diode Voltage | 1.3V | |
Height | 15.21mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 128 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 4.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Length 10.36mm | ||
Forward Diode Voltage 1.3V | ||
Height 15.21mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
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