onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

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Subtotal (1 tube of 800 units)*

£1,845.60

(exc. VAT)

£2,214.40

(inc. VAT)

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Units
Per unit
Per Tube*
800 +£2.307£1,845.60

*price indicative

RS Stock No.:
181-1859
Mfr. Part No.:
FDP4D5N10C
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.36mm

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

COO (Country of Origin):
CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter

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