onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C
- RS Stock No.:
- 181-1899
- Mfr. Part No.:
- FDP2D3N10C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£8.24
(exc. VAT)
£9.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,548 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.12 | £8.24 |
| 20 - 198 | £3.55 | £7.10 |
| 200 + | £3.08 | £6.16 |
*price indicative
- RS Stock No.:
- 181-1899
- Mfr. Part No.:
- FDP2D3N10C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 222A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.67 mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 15.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 222A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Width 4.67 mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 15.21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
Power Density & Shielded Gate
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 108nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Good EMI performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
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