This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
Power Density & Shielded Gate
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 108nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	222 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220F
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Length	10.36mm
	Number of Elements per Chip	1
	Width	4.9mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	108 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	16.07mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 222 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220F
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Length 10.36mm
	Number of Elements per Chip 1
	Width 4.9mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 108 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 16.07mm

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C

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