N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK Infineon IRFS3307ZTRLPBF

RS Stock No.:: 130-0997
Mfr. Part No.:: IRFS3307ZTRLPBF
Brand:: Infineon

N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK Infineon IRFS3307ZTRLPBF

1270 In stock - FREE next working day delivery available

Price Each (In a Pack of 5)

£1.86

(exc. VAT)

£2.23

(inc. VAT)

Units	Per unit	Per Pack*
5 - 20	£1.86	£9.30
25 - 45	£1.768	£8.84
50 - 120	£1.692	£8.46
125 - 245	£1.582	£7.91
250 +	£1.488	£7.44

*price indicative

RS Stock No.:: 130-0997
Mfr. Part No.:: IRFS3307ZTRLPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	128 A
Maximum Drain Source Voltage	75 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	230 W
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Typical Gate Charge @ Vgs	79 nC @ 10 V
Width	9.65mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V