Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

RS Stock No.:: 180-8044
Mfr. Part No.:: SI4497DY-T1-GE3
Brand:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

Bulk discount available

Subtotal (1 pack of 5 units)*

£8.96

(exc. VAT)

£10.75

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 17 August 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£1.792	£8.96
50 - 120	£1.486	£7.43
125 - 245	£1.346	£6.73
250 - 495	£1.164	£5.82
500 +	£1.076	£5.38

*price indicative

RS Stock No.:: 180-8044
Mfr. Part No.:: SI4497DY-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	129nC
	Maximum Power Dissipation Pd	5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Width	6.2 mm
	Standards/Approvals	No
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 129nC
	Maximum Power Dissipation Pd 5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Width 6.2 mm
	Standards/Approvals No
	Length 5mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• High current load switch

• Notebook

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested