Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Available to back order for despatch 10/09/2024
Added
Price Each (In a Pack of 10)
£1.08
(exc. VAT)
£1.30
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 90 | £1.08 | £10.80 |
| 100 - 490 | £0.757 | £7.57 |
| 500 - 990 | £0.679 | £6.79 |
| 1000 - 1490 | £0.661 | £6.61 |
| 1500 + | £0.645 | £6.45 |
| *price indicative | ||
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 17 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 23 W |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 6.3 nC @ 10 V |
| Length | 5.1mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +175 °C |
| Width | 6.1mm |
| Height | 1.05mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
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