onsemi Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN NVMFD5C478NT1G
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.07
(exc. VAT)
£12.08
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.007 | £10.07 |
| 100 - 240 | £0.868 | £8.68 |
| 250 - 490 | £0.753 | £7.53 |
| 500 - 990 | £0.662 | £6.62 |
| 1000 + | £0.602 | £6.02 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (On a Reel of 1500)
£0.622
(exc. VAT)
£0.746
(inc. VAT)
- RS Stock No.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 27 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 23 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 6.3 nC @ 10 V | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 23 W | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 6.3 nC @ 10 V | ||
Length 5.1mm | ||
Width 6.1mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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