onsemi N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 FCP125N65S3R0

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Subtotal (1 tube of 50 units)*

£87.35

(exc. VAT)

£104.80

(inc. VAT)

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  • 800 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£1.747£87.35
100 - 200£1.689£84.45
250 - 450£1.645£82.25
500 - 950£1.603£80.15
1000 +£1.563£78.15

*price indicative

RS Stock No.:
178-4242
Mfr. Part No.:
FCP125N65S3R0
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.7mm

Length

10.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150 °C
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consummer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter

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