onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 FCP067N65S3
- RS Stock No.:
- 172-3424
- Mfr. Part No.:
- FCP067N65S3
- Brand:
- onsemi
Subtotal (1 tube of 800 units)*
£2,184.00
(exc. VAT)
£2,624.00
(inc. VAT)
FREE delivery for orders over £50.00
- 1,600 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
800 + | £2.73 | £2,184.00 |
*price indicative
- RS Stock No.:
- 172-3424
- Mfr. Part No.:
- FCP067N65S3
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 44 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 67 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 312 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 78 nC @ 10 V | |
Width | 4.7mm | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Height | 16.3mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 67 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 312 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 78 nC @ 10 V | ||
Width 4.7mm | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Automation
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