onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK NVB072N65S3

Save 25% when you buy 200 units

Subtotal (1 pack of 2 units)*

£11.10

(exc. VAT)

£13.32

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 770 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18£5.55£11.10
20 - 198£4.785£9.57
200 +£4.15£8.30

*price indicative

Packaging Options:
RS Stock No.:
186-1461
Mfr. Part No.:
NVB072N65S3
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

107 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

9.65mm

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

4.58mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter

Related links