onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

Subtotal (1 tube of 50 units)*

£59.10

(exc. VAT)

£70.90

(inc. VAT)

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Last RS stock
  • Final 650 unit(s), ready to ship
Units
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Per Tube*
50 +£1.182£59.10

*price indicative

RS Stock No.:
178-4243
Mfr. Part No.:
FCP165N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Series

SUPERFET III

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

154W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS, Pb-Free, Halide Free

Height

16.3mm

Automotive Standard

No

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 39 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

Internal Gate Resistance: 4.6 Ω

Optimized Capacitance

Typ. RDS(on) = 140 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consumer

Industrial

End Products:

Notebook / Desktop computer

Game Console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

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