onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3

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Subtotal (1 pack of 5 units)*

£15.19

(exc. VAT)

£18.23

(inc. VAT)

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  • Final 700 unit(s), ready to ship
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5 +£3.038£15.19

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Packaging Options:
RS Stock No.:
178-4676
Mfr. Part No.:
FCP165N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

39 nC @ 10 V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter

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