N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-247 onsemi NVHL072N65S3
- RS Stock No.:
- 186-1537
- Mfr. Part No.:
- NVHL072N65S3
- Brand:
- onsemi
Available to back order for despatch 22/04/2025
Price Each (In a Pack of 2)
£6.21
(exc. VAT)
£7.45
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £6.21 | £12.42 |
| 10 - 98 | £5.12 | £10.24 |
| 100 - 248 | £4.485 | £8.97 |
| 250 - 498 | £4.16 | £8.32 |
| 500 + | £3.695 | £7.39 |
*price indicative
- RS Stock No.:
- 186-1537
- Mfr. Part No.:
- NVHL072N65S3
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 107 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 312 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Length | 15.87mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 4.82mm |
| Height | 20.82mm |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
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