N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 onsemi FCP067N65S3
- RS Stock No.:
- 172-4628
- Mfr. Part No.:
- FCP067N65S3
- Brand:
- onsemi
2400 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£4.96
(exc. VAT)
£5.95
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £4.96 | £24.80 |
| 10 - 95 | £3.93 | £19.65 |
| 100 - 495 | £3.392 | £16.96 |
| 500 - 995 | £3.004 | £15.02 |
| 1000 + | £2.79 | £13.95 |
*price indicative
- RS Stock No.:
- 172-4628
- Mfr. Part No.:
- FCP067N65S3
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Automation
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Automation
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 67 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 312 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Length | 10.67mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 16.3mm |
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