onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP150N65S3HF
- RS Stock No.:
- 189-0372
- Mfr. Part No.:
- NTP150N65S3HF
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£11.37
(exc. VAT)
£13.645
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £2.274 | £11.37 |
*price indicative
- RS Stock No.:
- 189-0372
- Mfr. Part No.:
- NTP150N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 150°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)
Higher system reliability at low temperature operation
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 121 mΩ
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Related links
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