onsemi N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 NTP150N65S3HF
- RS Stock No.:
- 189-0372
- Mfr. Part No.:
- NTP150N65S3HF
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£11.37
(exc. VAT)
£13.645
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 20 February 2026
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.274 | £11.37 |
*price indicative
- RS Stock No.:
- 189-0372
- Mfr. Part No.:
- NTP150N65S3HF
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 24 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 192 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 43 nC @ 10 V | |
Length | 10.67mm | |
Width | 4.7mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Height | 16.3mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 192 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 43 nC @ 10 V | ||
Length 10.67mm | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.3mm | ||
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)
Higher system reliability at low temperature operation
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 121 mΩ
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
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