Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92 TN2106N3-G
- RS Stock No.:
- 177-9850
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
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Subtotal (1 pack of 20 units)*
£9.94
(exc. VAT)
£11.92
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 160 unit(s) ready to ship
- Plus 200 unit(s) ready to ship from another location
- Plus 1,460 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.497 | £9.94 |
| 40 - 80 | £0.473 | £9.46 |
| 100 + | £0.428 | £8.56 |
*price indicative
- RS Stock No.:
- 177-9850
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN2106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 740mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Length | 5.08mm | |
| Standards/Approvals | No | |
| Width | 4.06 mm | |
| Distrelec Product Id | 304-38-567 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN2106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 740mW | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Length 5.08mm | ||
Standards/Approvals No | ||
Width 4.06 mm | ||
Distrelec Product Id 304-38-567 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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