Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 TN2106N3-G
- RS Stock No.:
- 177-9692
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£425.00
(exc. VAT)
£510.00
(inc. VAT)
FREE delivery for orders over £50.00
- 1,000 unit(s) ready to ship
Units | Per unit | Per Bag* |
---|---|---|
1000 + | £0.425 | £425.00 |
*price indicative
- RS Stock No.:
- 177-9692
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 300 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-92 | |
Series | TN2106 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 0.6V | |
Maximum Power Dissipation | 740 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Length | 5.08mm | |
Width | 4.06mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Height | 5.33mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.8V | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Series TN2106 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 740 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5.08mm | ||
Width 4.06mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.8V | ||
- COO (Country of Origin):
- TW
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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