onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 166-2858
- Mfr. Part No.:
- 2N7002K
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)*
£108.00
(exc. VAT)
£129.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 21,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | £0.036 | £108.00 |
| 9000 - 21000 | £0.03 | £90.00 |
| 24000 - 42000 | £0.029 | £87.00 |
| 45000 - 96000 | £0.027 | £81.00 |
| 99000 + | £0.027 | £81.00 |
*price indicative
- RS Stock No.:
- 166-2858
- Mfr. Part No.:
- 2N7002K
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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