Nexperia N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002,215
- RS Stock No.:
- 436-7379
- Mfr. Part No.:
- 2N7002,215
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)*
£1.625
(exc. VAT)
£1.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 175 unit(s) shipping from 03 November 2025
- Plus 275 unit(s) shipping from 03 November 2025
- Plus 700 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 125 | £0.065 | £1.63 |
| 150 - 725 | £0.059 | £1.48 |
| 750 + | £0.052 | £1.30 |
*price indicative
- RS Stock No.:
- 436-7379
- Mfr. Part No.:
- 2N7002,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 830 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 1.4mm | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 830 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 1.4mm | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -65 °C | ||
- COO (Country of Origin):
- CN
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