Nexperia N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 PMBF170,215

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£3.35

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£4.00

(inc. VAT)

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  • 1,000 unit(s) ready to ship
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50 - 50£0.067£3.35
100 - 200£0.027£1.35
250 - 450£0.027£1.35
500 - 950£0.026£1.30
1000 +£0.025£1.25

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Packaging Options:
RS Stock No.:
484-3536
Mfr. Part No.:
PMBF170,215
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-65 °C

COO (Country of Origin):
CN

N-Channel MOSFET, 60V to 80V, Nexperia


The Nexperia a PMBF170 is an Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Saves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources


MOSFET Transistors, NXP Semiconductors

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