Microchip TN2106 N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 TN2106K1-G

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Subtotal (1 reel of 3000 units)*

£1,074.00

(exc. VAT)

£1,290.00

(inc. VAT)

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Per Reel*
3000 +£0.358£1,074.00

*price indicative

RS Stock No.:
177-9691
Mfr. Part No.:
TN2106K1-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Series

TN2106

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Number of Elements per Chip

1

Width

1.4mm

Forward Diode Voltage

1.8V

Height

1.02mm

Minimum Operating Temperature

-55 °C

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

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