Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

£858.00

(exc. VAT)

£1,029.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.286£858.00

*price indicative

RS Stock No.:
177-9691
Mfr. Part No.:
TN2106K1-G
Brand:
Microchip
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Brand

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

280mA

Maximum Drain Source Voltage Vds

60V

Series

TN2106

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

360mW

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.02mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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