Microchip VP2450 P-Channel MOSFET, 160 mA, 500 V, 3-Pin SOT-89 VP2450N8-G

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Subtotal (1 reel of 2000 units)*

£2,640.00

(exc. VAT)

£3,160.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£1.32£2,640.00

*price indicative

RS Stock No.:
177-9709
Mfr. Part No.:
VP2450N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

500 V

Package Type

SOT-89

Series

VP2450

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

2.6mm

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Forward Diode Voltage

1.8V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode

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