Microchip TP2510 Silicon P-Channel MOSFET, 480 mA, 100 V, 3-Pin SOT-89 TP2510N8-G
- RS Stock No.:
- 333-254
- Mfr. Part No.:
- TP2510N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£2,240.00
(exc. VAT)
£2,680.00
(inc. VAT)
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Units | Per unit | Per Reel* |
---|---|---|
2000 + | £1.12 | £2,240.00 |
*price indicative
- RS Stock No.:
- 333-254
- Mfr. Part No.:
- TP2510N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | P | |
Maximum Continuous Drain Current | 480 mA | |
Maximum Drain Source Voltage | 100 V | |
Series | TP2510 | |
Package Type | SOT-89 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 480 mA | ||
Maximum Drain Source Voltage 100 V | ||
Series TP2510 | ||
Package Type SOT-89 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip MOSFET is a low threshold Enhancement mode transistor uses a vertical DMOS structure and a well proven silicon gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
2V maximum low threshold
High input impedance
125 pF maximum low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
125 pF maximum low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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