Microchip TP2510 Type P-Channel MOSFET, 100 V Enhancement, 3-Pin SOT-89 TP2510N8-G
- RS Stock No.:
- 333-254
- Mfr. Part No.:
- TP2510N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£2,240.00
(exc. VAT)
£2,680.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £1.12 | £2,240.00 |
*price indicative
- RS Stock No.:
- 333-254
- Mfr. Part No.:
- TP2510N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | TP2510 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series TP2510 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold Enhancement mode transistor uses a vertical DMOS structure and a well proven silicon gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
2V maximum low threshold
High input impedance
125 pF maximum low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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