Microchip TN2540 N-Channel MOSFET, 260 mA, 400 V, 3-Pin TO-243AA TN2540N8-G

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Subtotal (1 reel of 2000 units)*

£1,854.00

(exc. VAT)

£2,224.00

(inc. VAT)

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Per Reel*
2000 +£0.927£1,854.00

*price indicative

RS Stock No.:
177-9693
Mfr. Part No.:
TN2540N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

400 V

Package Type

TO-243AA

Series

TN2540

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

4.6mm

Number of Elements per Chip

1

Width

2.6mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.8V

Height

1.6mm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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