Microchip TP2540 P-Channel MOSFET, 125 mA, 400 V, 3-Pin TO-243AA TP2540N8-G

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£2,180.00

(exc. VAT)

£2,620.00

(inc. VAT)

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RS Stock No.:
177-9695
Mfr. Part No.:
TP2540N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

125 mA

Maximum Drain Source Voltage

400 V

Series

TP2540

Package Type

TO-243AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

30 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

2.6mm

Maximum Operating Temperature

+150 °C

Length

4.6mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.8V

Height

1.6mm

COO (Country of Origin):
TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (-2.4V max.)
High input impedance
Low input capacitance (60pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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