onsemi NTH Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 172-8790
- Mfr. Part No.:
- NTHL082N65S3F
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 172-8790
- Mfr. Part No.:
- NTHL082N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Automotive Standard No | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
EV charger
Solar / UPS
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