onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3F
- RS Stock No.:
- 172-8980
- Mfr. Part No.:
- NTHL082N65S3F
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 172-8980
- Mfr. Part No.:
- NTHL082N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 82 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 313 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Length | 15.87mm | |
Width | 4.82mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 81 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Height | 20.82mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 313 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 15.87mm | ||
Width 4.82mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 81 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 20.82mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
EV charger
Solar / UPS
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
EV charger
Solar / UPS
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