onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3F

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Packaging Options:
RS Stock No.:
172-8980
Mfr. Part No.:
NTHL082N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

15.87mm

Width

4.82mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

81 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

20.82mm

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
EV charger
Solar / UPS

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