onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

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Subtotal (1 pack of 10 units)*

£21.63

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£25.96

(inc. VAT)

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Units
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Per Pack*
10 - 90£2.163£21.63
100 - 240£1.865£18.65
250 +£1.617£16.17

*price indicative

Packaging Options:
RS Stock No.:
172-4630
Mfr. Part No.:
FCB199N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Series

FCB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

199mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

98W

Typical Gate Charge Qg @ Vgs

30nC

Maximum Operating Temperature

150°C

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

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