onsemi N-Channel MOSFET, 14 A, 650 V, 3-Pin D2PAK FCB199N65S3
- RS Stock No.:
- 172-4630
- Mfr. Part No.:
- FCB199N65S3
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£21.63
(exc. VAT)
£25.96
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £2.163 | £21.63 |
| 100 - 240 | £1.865 | £18.65 |
| 250 + | £1.617 | £16.17 |
*price indicative
- RS Stock No.:
- 172-4630
- Mfr. Part No.:
- FCB199N65S3
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 199 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 98 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 98 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Width 9.65mm | ||
Height 4.83mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Related links
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK FCB199N65S3
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NTB095N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NVB150N65S3F
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R170CFD7XKSA1
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NVB082N65S3F
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NTB110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NVB190N65S3F
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NVB072N65S3