Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1
- RS Stock No.:
- 171-1985
- Mfr. Part No.:
- BSC035N10NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£14.72
(exc. VAT)
£17.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
- Plus 999,999,960 unit(s) shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.472 | £14.72 |
| 20 - 40 | £1.207 | £12.07 |
| 50 - 90 | £1.133 | £11.33 |
| 100 - 240 | £1.06 | £10.60 |
| 250 + | £0.972 | £9.72 |
*price indicative
- RS Stock No.:
- 171-1985
- Mfr. Part No.:
- BSC035N10NS5ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 5 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Length 5.49mm | ||
Width 6.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
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