Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1
- RS Stock No.:
- 170-2309
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£4,275.00
(exc. VAT)
£5,130.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.855 | £4,275.00 |
*price indicative
- RS Stock No.:
- 170-2309
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 139 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.49mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 5.49mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon BSC040N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL and its optimized for synchronous rectification and its ideal for high switching frequency switching.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC040N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC035N10NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 8-Pin TDSON BSC070N10NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TDSON BSC020N03LSGATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin TDSON ISC011N03L5SATMA1
- Infineon OptiMOS™ 2 N-Channel MOSFET 20 V, 8-Pin TDSON BSC026N02KSGAUMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin TDSON BSC039N06NSATMA1