Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance persilicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase,infrared, or wave soldering technique.

Benefits:
P-Channel MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.