Infineon Si4435DYPbF P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

RS Stock No.:: 171-1913
Mfr. Part No.:: SI4435DYTRPBF
Brand:: Infineon

Infineon Si4435DYPbF P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

Bulk discount available

Subtotal (1 pack of 10 units)*

£5.62

(exc. VAT)

£6.74

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

6,600 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.562	£5.62
100 - 240	£0.533	£5.33
250 - 490	£0.511	£5.11
500 - 990	£0.489	£4.89
1000 +	£0.455	£4.55

*price indicative

RS Stock No.:: 171-1913
Mfr. Part No.:: SI4435DYTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	8 A
	Maximum Drain Source Voltage	30 V
	Package Type	SO-8
	Series	Si4435DYPbF
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	35 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	40 nC @ 10 V
	Length	5mm
	Width	4mm
	Height	1.5mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Typical Power Gain	0

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 8 A
	Maximum Drain Source Voltage 30 V
	Package Type SO-8
	Series Si4435DYPbF
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 35 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 40 nC @ 10 V
	Length 5mm
	Width 4mm
	Height 1.5mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Typical Power Gain 0

Non Compliant

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET
Surface mount
Available in tape and reel
Lead free

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon Si4435DYPbF P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

FREE delivery for orders over £50.00

P-Channel Power MOSFET 30V, Infineon

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