MPN

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No.:: 170-2264
Mfr. Part No.:: SI4435DYTRPBF
Brand:: Infineon

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

Subtotal (1 reel of 4000 units)*

£968.00

(exc. VAT)

£1,160.00

(inc. VAT)

Add 4000 units to get free delivery

Orders below £50.00 (exc. VAT) cost £6.95.

Last RS stock

Final 4,000 unit(s), ready to ship

Units	Per unit	Per Reel*
4000 +	£0.242	£968.00

*price indicative

RS Stock No.:: 170-2264
Mfr. Part No.:: SI4435DYTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	Si4435DYPbF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	40nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4 mm
	Standards/Approvals	No
	Height	1.5mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series Si4435DYPbF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 40nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4 mm
	Standards/Approvals No
	Height 1.5mm
	Length 5mm
	Automotive Standard No

Non Compliant

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free