Nexperia BUK9Y19 N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 BUK9Y19-55B,115

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RS Stock No.:
170-4884
Mfr. Part No.:
BUK9Y19-55B,115
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

184 A

Maximum Drain Source Voltage

55 V

Package Type

LFPAK, SOT-669

Series

BUK9Y19

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Typical Gate Charge @ Vgs

18 nC @ 5 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.1mm

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.

Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.

low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids

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