Nexperia BUK9Y19 N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Brand:
- Nexperia
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
£14.15
(exc. VAT)
£16.98
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 25 unit(s) shipping from 05 October 2026
- Plus 1,450 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.566 | £14.15 |
| 125 - 225 | £0.514 | £12.85 |
| 250 - 600 | £0.472 | £11.80 |
| 625 - 1225 | £0.448 | £11.20 |
| 1250 + | £0.429 | £10.73 |
*price indicative
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 184A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | BUK9Y19 | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Width | 4.1mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 184A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series BUK9Y19 | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs 15V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Width 4.1mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
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