Nexperia BUK9Y19 N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 BUK9Y19-55B,115
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)*
£14.15
(exc. VAT)
£16.975
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 50 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.566 | £14.15 |
| 125 - 225 | £0.514 | £12.85 |
| 250 - 600 | £0.472 | £11.80 |
| 625 - 1225 | £0.448 | £11.20 |
| 1250 + | £0.429 | £10.73 |
*price indicative
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 184 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | LFPAK, SOT-669 | |
| Series | BUK9Y19 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 85 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 15 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 18 nC @ 5 V | |
| Width | 4.1mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 184 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type LFPAK, SOT-669 | ||
Series BUK9Y19 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 85 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 15 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 18 nC @ 5 V | ||
Width 4.1mm | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1.05mm | ||
- COO (Country of Origin):
- PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
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