STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17.5 A, 950 V, 3-Pin TO-220 STP20N95K5
- RS Stock No.:
- 168-8885
- Mfr. Part No.:
- STP20N95K5
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£159.95
(exc. VAT)
£191.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 950 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £3.199 | £159.95 |
*price indicative
- RS Stock No.:
- 168-8885
- Mfr. Part No.:
- STP20N95K5
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.5 A | |
| Maximum Drain Source Voltage | 950 V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 330 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 950 V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
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