STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17.5 A, 950 V, 3-Pin TO-247 STW20N95K5
- RS Stock No.:
- 877-3021
- Mfr. Part No.:
- STW20N95K5
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£26.99
(exc. VAT)
£32.39
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 12 March 2026
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £5.398 | £26.99 |
25 - 45 | £5.13 | £25.65 |
50 - 120 | £4.616 | £23.08 |
125 + | £4.59 | £22.95 |
*price indicative
- RS Stock No.:
- 877-3021
- Mfr. Part No.:
- STW20N95K5
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 17.5 A | |
Maximum Drain Source Voltage | 950 V | |
Package Type | TO-247 | |
Series | MDmesh, SuperMESH | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 330 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
Length | 15.75mm | |
Width | 5.15mm | |
Height | 20.15mm | |
Forward Diode Voltage | 1.5V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 950 V | ||
Package Type TO-247 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Length 15.75mm | ||
Width 5.15mm | ||
Height 20.15mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
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