STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10.5 A, 800 V, 3-Pin TO-247 STW12NK80Z
- RS Stock No.:
- 920-8859
- Mfr. Part No.:
- STW12NK80Z
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£71.94
(exc. VAT)
£86.34
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | £2.398 | £71.94 |
| 90 - 480 | £1.916 | £57.48 |
| 510 - 960 | £1.708 | £51.24 |
| 990 - 4980 | £1.441 | £43.23 |
| 5010 + | £1.391 | £41.73 |
*price indicative
- RS Stock No.:
- 920-8859
- Mfr. Part No.:
- STW12NK80Z
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10.5 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247 | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 750 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.75mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.5 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 750 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.15mm | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 20.15mm | ||
Related links
- STMicroelectronics MDmesh 10.5 A 3-Pin TO-247 STW12NK80Z
- STMicroelectronics MDmesh 10.5 A 3-Pin TO-220 STP12NK80Z
- STMicroelectronics MDmesh 9 A 3-Pin TO-247 STW10NK80Z
- STMicroelectronics MDmesh 9 A 3-Pin TO-220 STP10NK80Z
- STMicroelectronics MDmesh 6.2 A 3-Pin TO-220FP STP8NK80ZFP
- STMicroelectronics MDmesh 9 A 3-Pin TO-220FP STP10NK80ZFP
- STMicroelectronics MDmesh 3 A 3-Pin TO-220FP STP4NK80ZFP
- STMicroelectronics MDmesh 5.2 A 3-Pin TO-220FP STP7NK80ZFP