Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin DPAK IRLR024NTRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

15 nC @ 5 V

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm