IXYS X2-Class N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXTH80N65X2

Subtotal (1 tube of 30 units)*

£239.88

(exc. VAT)

£287.85

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£7.996£239.88

*price indicative

RS Stock No.:
168-4815
Mfr. Part No.:
IXTH80N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

X2-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

890 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

137 nC @ 10 V

Width

21.34mm

Transistor Material

Si

Length

16.13mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

5.21mm

Forward Diode Voltage

1.4V

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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