IXYS X2-Class N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2
- RS Stock No.:
- 146-1778
- Mfr. Part No.:
- IXTP4N65X2
- Brand:
- IXYS
Subtotal (1 tube of 50 units)*
£78.90
(exc. VAT)
£94.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,950 unit(s) shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £1.578 | £78.90 |
*price indicative
- RS Stock No.:
- 146-1778
- Mfr. Part No.:
- IXTP4N65X2
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | X2-Class | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 850 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V | |
| Width | 15.9mm | |
| Length | 10.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.7mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 650 V | ||
Series X2-Class | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 850 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.3 nC @ 10 V | ||
Width 15.9mm | ||
Length 10.3mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.7mm | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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