IXYS X2-Class N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M
- RS Stock No.:
- 917-1491
- Mfr. Part No.:
- IXTP8N65X2M
- Brand:
- IXYS
Subtotal (1 pack of 5 units)*
£14.11
(exc. VAT)
£16.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 25 unit(s) ready to ship
- Plus 50 unit(s) shipping from 19 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £2.822 | £14.11 |
*price indicative
- RS Stock No.:
- 917-1491
- Mfr. Part No.:
- IXTP8N65X2M
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | X2-Class | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 550 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.36mm | |
| Width | 16.07mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.4V | |
| Height | 4.9mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 650 V | ||
Series X2-Class | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 550 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.36mm | ||
Width 16.07mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.4V | ||
Height 4.9mm | ||
Minimum Operating Temperature -55 °C | ||
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