IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

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Subtotal (1 tube of 10 units)*

£230.01

(exc. VAT)

£276.01

(inc. VAT)

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  • 230 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 - 10£23.001£230.01
20 - 40£22.081£220.81
50 +£21.391£213.91

*price indicative

RS Stock No.:
168-4759
Mfr. Part No.:
IXFN80N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

600 V

Package Type

SOT-227

Series

HiperFET, Polar3

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

190 nC @ 10 V

Length

38.23mm

Minimum Operating Temperature

-55 °C

Height

9.6mm

COO (Country of Origin):
US

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