IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

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Subtotal (1 tube of 10 units)*

£185.09

(exc. VAT)

£222.11

(inc. VAT)

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In Stock
  • 230 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 - 10£18.509£185.09
20 - 40£17.769£177.69
50 +£17.213£172.13

*price indicative

RS Stock No.:
168-4759
Mfr. Part No.:
IXFN80N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.07mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

190 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

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