IXYS HiperFET, Polar3 N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXFN132N50P3

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

38.23mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

250 nC @ 10 V

Transistor Material

Si

Width

25.07mm

Minimum Operating Temperature

-55 °C

Height

9.6mm