IXYS HiperFET, Polar3 N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXFN132N50P3

Unavailable
RS will no longer stock this product.
RS Stock No.:
804-7599
Mfr. Part No.:
IXFN132N50P3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

250 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.23mm

Width

25.07mm

Transistor Material

Si

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links