IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

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Subtotal (1 tube of 10 units)*

£287.56

(exc. VAT)

£345.07

(inc. VAT)

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  • 70 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +£28.756£287.56

*price indicative

RS Stock No.:
168-4756
Mfr. Part No.:
IXFN110N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.07mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

245 nC @ 10 V

Length

38.23mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

COO (Country of Origin):
US

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