IXYS PolarHVTM HiPerFET N-Channel MOSFET, 70 A, 500 V, 3-Pin ISOPLUS264 IXFL100N50P

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Subtotal (1 tube of 25 units)*

£577.20

(exc. VAT)

£692.65

(inc. VAT)

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In Stock
  • Plus 25 unit(s) shipping from 10 November 2025
  • Plus 999,999,950 unit(s) shipping from 12 October 2026
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Units
Per unit
Per Tube*
25 +£23.088£577.20

*price indicative

RS Stock No.:
168-4575
Mfr. Part No.:
IXFL100N50P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

500 V

Package Type

ISOPLUS264

Series

PolarHVTM HiPerFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

625 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.21mm

Length

20.29mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

240 nC @ 10 V

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

Height

26.42mm

N-Channel Power MOSFET, IXYS HiperFET PolarHV Series


A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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