IXYS HiperFET N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X
- RS Stock No.:
- 146-4246
- Mfr. Part No.:
- IXFB90N85X
- Brand:
- IXYS
Subtotal (1 tube of 25 units)*
£378.475
(exc. VAT)
£454.175
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 25 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 + | £15.139 | £378.475 |
*price indicative
- RS Stock No.:
- 146-4246
- Mfr. Part No.:
- IXFB90N85X
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 850 V | |
| Package Type | PLUS264 | |
| Series | HiperFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 1.79 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 340 @ 10 V nC | |
| Length | 20.29mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 26.59mm | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 850 V | ||
Package Type PLUS264 | ||
Series HiperFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 1.79 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 340 @ 10 V nC | ||
Length 20.29mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 26.59mm | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
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