IXYS HiperFET N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X

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Subtotal (1 tube of 25 units)*

£378.475

(exc. VAT)

£454.175

(inc. VAT)

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  • 25 unit(s) ready to ship
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Per Tube*
25 +£15.139£378.48

*price indicative

RS Stock No.:
146-4246
Mfr. Part No.:
IXFB90N85X
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.79 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Length

20.29mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

340 @ 10 V nC

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Height

26.59mm

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages

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